ADATA SSD XPG Gammix S70 Blade M.2 2280 NVMe 512 GB
- VendorADATA
Description
ADATA SSD XPG Gammix S70 Blade M.2 2280 NVMe 512 GB
SSD with M.2 2280 form factor and advanced PCIe Gen4 x4 technology
XPG GAMMIX S70 BLADE. SSD storage capacity: 512 GB, SSD form factor: M.2, Read speed: 7400 MB/s, Write speed: 2600 MB/s, Component for: PC/Laptop
XPG GAMMIX S70 BLADE, 512 GB, M.2, 7400 MB/s
3D NAND Flash Memory
In 3D NAND (also known as V-NAND or 3D V-NAND), the transistors stand vertically to the chip surface and the flash memory cells are arranged in layers on top of each other. This achieves a higher storage density while reducing the risk of interference between the cells. Thanks to the shortened connections between the cells, the electrical performance increases, and as a result, the power consumption decreases.
Specifications
- SSD application area:
- Consumer
- Storage interface:
- U.2 (PCIe 4.0 x4)
- Special features:
- Without heatsink
- Total storage capacity:
- 512 GB
- Max. read speed:
- 7400 MB/s
- Max. write speed:
- 2600 MB/s
- NAND flash:
- 3D NAND
- 4 KB sequential read IOPS:
- 750000 IOPS
- 4 KB sequential write IOPS:
- 750000 IOPS
- SSD form factor:
- M.2 2280
- Hard drive interface:
- NVMe
- Max. TBW (Total Bytes Written):
- 5920 TB
- SSD height:
- 3.3 mm
ADATA SSD XPG Gammix S70 Blade M.2 2280 NVMe 512 GB
- VendorADATA
115.90
M.2 2280 SSD, 512 GB, U.2 (PCIe 4.0 x4) | Height: 3.3 mm | NAND Flash: 3D NAND | Max. read speed: 7400 MB/s | Max. write speed: 2600 MB/s
Description
ADATA SSD XPG Gammix S70 Blade M.2 2280 NVMe 512 GB
SSD with M.2 2280 form factor and advanced PCIe Gen4 x4 technology
XPG GAMMIX S70 BLADE. SSD storage capacity: 512 GB, SSD form factor: M.2, Read speed: 7400 MB/s, Write speed: 2600 MB/s, Component for: PC/Laptop
XPG GAMMIX S70 BLADE, 512 GB, M.2, 7400 MB/s
3D NAND Flash Memory
In 3D NAND (also known as V-NAND or 3D V-NAND), the transistors stand vertically to the chip surface and the flash memory cells are arranged in layers on top of each other. This achieves a higher storage density while reducing the risk of interference between the cells. Thanks to the shortened connections between the cells, the electrical performance increases, and as a result, the power consumption decreases.
